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| BFU690F Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
600
CCBS
(fF)
400
001aam835
25
fT
(GHz)
20
15
001aam836
10
200
5
0
0
4
8
12
VCB (V)
Fig 4.
f = 1 MHz, Tamb = 25 ï°C.
Collector-base capacitance as a function of
collector-base voltage; typical values
25
G
(dB)
20
MSG
15
0
0
20
40
60
80
100
IC (mA)
Fig 5.
VCE = 1 V; f = 2 GHz; Tamb = 25 ï°C.
Transition frequency as a function of collector
current; typical values
001aam837
(1)
(2)
(3)
Gp(max)
10
5
0
0
20
40
60
VCE = 1 V; Tamb = 25 ï°C.
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
Fig 6. Gain as a function of collector current; typical value
80
100
IC (mA)
BFU690F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 16 December 2010
© NXP B.V. 2010. All rights reserved.
6 of 12
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