 English |
|
|
|
|
|
|
|
| BFU690F Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
| |||
| ◁ |
NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCBO
VCEO
VEBO
IC
Ptot
hFE
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
CCBS
fT
collector-base
capacitance
transition frequency
Gp(max) maximum power gain
NF
noise figure
PL(1dB) output power at 1 dB
gain compression
Conditions
open emitter
open base
open collector
Tsp ï£ 90 ï°C
IC = 20 mA; VCE = 2 V;
Tj = 25 ï°C
VCB = 2 V; f = 1 MHz
IC = 60 mA; VCE = 1 V;
f = 2 GHz; Tamb = 25 ï°C
IC = 60 mA; VCE = 1 V;
f = 1.8 GHz; Tamb = 25 ï°C
IC = 15 mA; VCE = 2 V;
f = 1.8 GHz; ïS = ïopt
IC = 70 mA; VCE = 4 V;
ZS = ZL = 50 ï;
f = 1.8 GHz; Tamb = 25 ï°C
Min Typ
--
--
--
- 70
[1] -
-
90 135
- 404
- 18
[2] -
20.5
- 0.65
- 22
Max
16
5.5
2.5
100
230
180
-
-
-
-
-
Unit
V
V
V
mA
mW
fF
GHz
dB
dB
dBm
[1] Tsp is the temperature at the solder point of the emitter lead.
[2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol
3
4
4
2
1
2
1, 3
mbb159
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BFU690F
-
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
BFU690F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 16 December 2010
© NXP B.V. 2010. All rights reserved.
2 of 12
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese