BFU690F Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
80
I_C
(mA)
60
40
20
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(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 C.
(1) I_B = 550 A
(2) I_B = 500 A
(3) I_B = 450 A
(4) I_B = 400 A
(5) I_B = 350 A
(6) I_B = 300 A
(7) I_B = 250 A
(8) I_B = 200 A
(9) I_B = 150 A
(10) I_B = 100 A
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
200
h_FE
150
001aam834
100
50
0
0
20
40
60
V_CE = 2 V; T_amb = 25 C.
80
100
I_C (mA)
Fig 3. DC current gain as a function of collector
current; typical values
BFU690F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 December 2010
© NXP B.V. 2010. All rights reserved.
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