BFU690F Datasheet, PDF (1/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

BFU690F
NPN wideband silicon RF transistor
Rev. 1 — 16 December 2010
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
 Low noise high linearity microwave transistor
 High output third-order intercept point 34 dBm at 1.8 GHz
 40 GHz f_T silicon technology
1.3 Applications
 Ka band oscillators DRO’s
 C-band high output buffer amplifier
 ZigBee
 LTE, cellular, UMTS