BFQ621 Datasheet, PDF (6/10 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFQ621
0
handbook, halfpage
d _im
(dB)
20
MLC992
40
60
80
0
50
100
150
200
I _C (mA)
V_O = 1.35 V; V_CE = 18 V; f_{(p + q − r)} = 443.25 MHz; see Fig.2.
Fig.5 Intermodulation distortion as a function
of collector current; typical values.
0
handbook, halfpage
d _im
(dB)
20
MLC993
40
60
80
0
50
100
150
200
I _C (mA)
V_O = 1.2 V; V_CE = 18 V; f_{(p + q − r)} = 793.25 MHz; see Fig.2.
Fig.6 Intermodulation distortion as a function
of collector current; typical values.
0
handbook, halfpage
d2
(dB)
20
40
60
80
0
50
MLC994
100
150
I _C (mA)
0
handbook, halfpage
d2
(dB)
20
40
60
80
0
50
MLC995
100
150
I _C (mA)
V_O = 50dBmV = 316 mV; V_CE = 18 V; f_{(p + q)} = 450 MHz; see Fig.2.
Fig.7 Second order distortion as a function
of collector current; typical values.
V_O = 50dBmV = 316 mV; V_CE = 18 V; f_{(p + q)} = 810 MHz; see Fig.2.
Fig.8 Second order distortion as a function
of collector current; typical values.
1995 Sep 26
6