BFQ621 Datasheet, PDF (3/10 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFQ621
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_mb = 25 °C
MIN.
−
−
−
−
−
−65
−
MAX.
25
16
2
150
8
+175
+200
UNIT
V
V
V
mA
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-mb} thermal resistance from junction to mounting base P_tot = 8 W; up to T_mb = 25 °C
VALUE
21.9
UNIT
K/W
1995 Sep 26
3