BFQ621 Datasheet, PDF(4/10 Page) NXP Semiconductors

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BFQ621 Datasheet, PDF (4/10 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

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Philips Semiconductors

NPN 7 GHz wideband transistor

Product speciï¬cation

BFQ621

CHARACTERISTICS

Tj = 25 Â°C (unless otherwise speciï¬ed).

SYMBOL

PARAMETER

CONDITIONS

MIN.

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

hFE

Cre

GUM

collector-base breakdown voltage IC = 0.1 mA; IE = 0

collector-emitter breakdown voltage IC = 10 mA; IB = 0

emitter-base breakdown voltage IE = 0.1 mA; IC = 0

collector-base leakage current

IE = 0; VCB = 18 V

DC current gain

transition frequency

IC = 50 mA; VCE = 10 V

IC = 120 mA; VCE = 18 V;

f = 1 GHz; see Fig.3

collector capacitance

IE = ie = 0; VCB = 18 V;

f = 1 MHz

emitter capacitance

IC = ic = 0; VEB = 0.5 V;

f = 1 MHz

feedback capacitance

IC = 0; VCE = 18 V; f = 1 MHz; â

see Fig.4

maximum unilateral power gain;

note 1

output voltage

IC = 120 mA; VCE = 18 V;

f = 500 MHz; Tamb = 25 Â°C;

IC = 120 mA; VCE = 18 V;

f = 800 MHz; Tamb = 25 Â°C;

note 2

note 3

second order intermodulation

note 4

distortion

note 5

TYP.

1.5

0.85

18.5

14.5

1.35

1.2

â60

MAX.

100

160

1.2

UNIT

ÂµA

GHz

Notes

1. GUM is the maximum unilateral power gain, assuming s12 is zero. GUM = 10 log -(---1-----â------s---1--1-----2s--)-2---1-(--1-2----â------s---2---2----2---)-- dB.

2. dim = â60dB (DIN45004B); see Fig.2; IC = 120 mA; VCE = 18 V; RL = 75 â¦; Tamb = 25 Â°C;

Vp = VO; fp = 445.25 MHz;

Vq = VO â6 dB; fq = 453.25 MHz;

Vr = VO â6 dB; fr = 455.25 MHz;

measured at f(p + q â r) = 443.25 MHz; see Fig.5.

3. dim = â60dB (DIN45004B); see Fig.2; IC = 120 mA; VCE = 18 V; RL = 75 â¦; Tamb = 25 Â°C;

Vp = VO; fp = 795.25 MHz;

Vq = VO â6 dB; fq = 803.25 MHz;

Vr = VO â6 dB; fr = 805.25 MHz;

measured at f(p + q â r) = 793.25 MHz; see Fig.6.

4. VO = 50 dBmV = 316 mV; IC = 90 mA; VCE = 18 V; RL = 75 â¦; Tamb = 25 Â°C;

measured at f(p + q) = 450 MHz; see Fig.7.

5. VO = 50 dBmV = 316 mV; IC = 90 mA; VCE = 18 V; RL = 75 â¦; Tamb = 25 Â°C;

measured at f(p + q) = 810 MHz; see Fig.8.

1995 Sep 26

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