BFQ621 Datasheet, PDF (2/10 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFQ621
FEATURES
• High power gain
• High output voltage
• High maximum junction temperature
• Gold metallization ensures excellent reliability.
APPLICATIONS
It is primarily intended for use in MATV and microwave
amplifiers, such as aerial amplifiers, radar systems,
oscilloscopes, spectrum analyzers, etc.
PINNING
PIN
1
collector
2
emitter
3
base
4
emitter
DESCRIPTION
DESCRIPTION
Silicon NPN transistor in a 4-lead dual-emitter SOT172A2
package with a ceramic cap. All leads are isolated from the
mounting base. Emitter ballasting resistors and application
of gold sandwich metallization ensures an optimum
temperature profile and excellent reliability properties.
handbook, halfpage
4
1
3
2
Top view
MSA457
Fig.1 SOT172A2.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_C
P_tot
h_FE
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
f_T
transition frequency
G_UM
maximum unilateral power gain
V_O
output voltage
CONDITIONS
open base
up to T_mb = 25 °C
I_C = 120 mA; V_CE = 18 V;
T_amb = 25 °C
I_C = 120 mA; V_CE = 18 V;
f = 1 GHz; T_amb = 25 °C
I_C = 120 mA; V_CE = 18 V;
f = 500 MHz; T_amb = 25 °C
I_C = 120 mA; V_CE = 18 V;
f_{(p + q − r)} = 793.25 MHz;
d_im = −60 dB; R_L = 75 Ω
MIN.
−
−
−
40
TYP.
−
−
−
−
MAX.
16
150
8
−
UNIT
V
mA
W
−
7
−
GHz
−
18.5 −
dB
−
1.2
−
V
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1995 Sep 26
2