BFG424W Datasheet, PDF (6/13 Pages) NXP Semiconductors – NPN 25 GHz wideband transistor

Philips Semiconductors
30
f_T
(GHz)
20
001aad808
BFG424W
NPN 25 GHz wideband transistor
30
G
(dB)
20
MSG
s₂₁ ²
001aad809
10
10
0
1
10
10²
I_C (mA)
V_CE = 2 V; f = 2 GHz; T_amb = 25 °C
Fig 5. Transition frequency as a function of collector
current; typical values
0
1
10
10²
I_C (mA)
V_CE = 2 V; f = 0.9 GHz; T_amb = 25 °C
Fig 6. Gain as a function of collector current; typical
values
30
G
(dB)
20
001aad810
MSG
G_p(max)
s₂₁ ²
50
G
(dB)
40
30
MSG
001aad811
20
s₂₁ ²
G_p(max)
10
10
0
1
10
10²
I_C (mA)
V_CE = 2 V; f = 2 GHz; T_amb = 25 °C
Fig 7. Gain as a function of collector current; typical
values
0
10^−1
1
10
10²
f (GHz)
V_CE = 2 V; I_C = 25 mA; T_amb = 25 °C
Fig 8. Gain as a function of frequency; typical values
BFG424W_1
Product data sheet
Rev. 01 — 21 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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