BFG424W Datasheet, PDF (1/13 Pages) NXP Semiconductors – NPN 25 GHz wideband transistor

BFG424W
NPN 25 GHz wideband transistor
Rev. 01 — 21 March 2006
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN double polysilicon wideband transistor with buried layer for low voltage applications
in a plastic, 4-pin dual-emitter SOT343R package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s Very high power gain
s Low noise figure
s High transition frequency
s Emitter is thermal lead
s Low feedback capacitance
1.3 Applications
s Radio Frequency (RF) front end wideband applications such as:
x analog and digital cellular telephones
x cordless telephones (Cordless Telephone (CT), Personal Handy-phone
System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.)
x radar detectors
x pagers
x Satellite Antenna TeleVison (SATV) tuners
x high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise
Block (LNB)
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
V_CBO
V_CEO
I_C
P_tot
collector-base voltage open emitter
collector-emitter voltage open base
collector current
total power dissipation T_sp ≤ 103 °C
Min Typ Max Unit
-
-
10 V
-
-
4.5 V
-
25 30 mA
[1] _-
-
135 mW