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BFG424W Datasheet, PDF (5/13 Pages) NXP Semiconductors – NPN 25 GHz wideband transistor
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Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
40
IC
(mA)
30
20
10
001aad805
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
0
0
1
2
3
4
5
VCE (V)
(1) IB = 400 µA
(2) IB = 350 µA
(3) IB = 300 µA
(4) IB = 250 µA
(5) IB = 200 µA
(6) IB = 150 µA
(7) IB = 100 µA
(8) IB = 50 µA
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
200
CCBS
(fF)
160
120
hFE
80
40
001aad806
(1)
(2)
(3)
0
0
10
20
30
40
IC (mA)
(1) VCE = 3 V
(2) VCE = 2 V
(3) VCE = 1 V
Fig 3. DC current gain as a function of collector
current; typical values
001aad807
120
80
40
0
0
1
2
3
4
5
VCB (V)
f = 1 MHz
Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values
BFG424W_1
Product data sheet
Rev. 01 — 21 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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