BFG424W Datasheet, PDF (2/13 Pages) NXP Semiconductors – NPN 25 GHz wideband transistor

Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
Table 1:
Symbol
h_FE
C_CBS
f_T
G_p(max)
NF
Quick reference data …continued
Parameter
Conditions
DC current gain
I_C = 25 mA; V_CE = 2 V;
T_j = 25 °C
collector-base
capacitance
V_CB = 2 V; f = 1 MHz
transition frequency
maximum power gain
noise figure
I_C = 25 mA; V_CE = 2 V;
f = 2 GHz; T_amb = 25 °C
I_C = 25 mA; V_CE = 2 V;
f = 2 GHz; T_amb = 25 °C
I_C = 2 mA; V_CE = 2 V;
f = 2 GHz; Γ_S = Γ_opt
Min Typ Max Unit
50 80 120
-
105 -
fF
-
25 -
GHz
[2] _-
22 -
dB
-
1.2 -
dB
[1] T_sp is the temperature at the soldering point of the emitter pins.
[2] G_p(max) is the maximum power gain, if K > 1. If K < 1 then G_p(max) = Maximum Stable Gain (MSG), see
Figure 8.
2. Pinning information
Table 2:
Pin
1
2
3
4
Pinning
Description
emitter
base
emitter
collector
Simplified outline Symbol
3
4
4
2
1
2
1, 3
mbb159
3. Ordering information
Table 3: Ordering information
Type number Package
Name Description
BFG424W
-
plastic surface mounted package; reverse pinning;
4 leads
4. Marking
Table 4: Marking
Type number
BFG424W
[1] * = p: made in Hong Kong.
Marking code ^[1]
ND*
Version
SOT343R
BFG424W_1
Product data sheet
Rev. 01 — 21 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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