RZ1214B35Y Datasheet, PDF (5/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
RZ1214B35Y
handbook, full pagewidth
VCC
,,,,,,,,,,,,, _0.59
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, ^input
11.5
7
5
5
19.5
5.75
0.59
output
100 pF
3
8
5
10
5.15 5
8
3
MGK061
Dimensions in mm.
Substrate: Epsilam.
Thickness: 0.635 mm.
Permittivity: ε_r = 10.
Fig.3 Wideband test circuit for class C operation at 1.2 to 1.4 GHz.
handbook, full pagewidth
1
0.5
2
0.2
+j
0
–j
0.2
1.4 GHz
Zi
1.3 ^1.2
0.2
0.5
1
2
1.2
1.3
ZL
1.4 GHz
5
10
5 10
∞
10
5
0.5
2
1
MCD626
Class C operation; V_CE = 50 V; P_L = 35 W; Z_o = 5 Ω; t_p = 150 µs; δ = 5%.
Fig.4 Input and optimum load impedances as functions of frequency; typical values.
1997 Feb 18
5