RZ1214B35Y Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
RZ1214B35Y
FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor providing excellent
current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
and excellent lifetime
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Internal input matching ensures good stability and
allows an easier design of wideband circuits.
APPLICATIONS
• Common base class-C wideband pulsed power
amplifiers for L-band radar applications in the
1.2 to 1.4 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
PINNING - SOT443A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
handbook, halfpage
1
2
Top view
c
b
3
e
MAM314
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to T_mb = 25 °C in a common base class-C wideband amplifier.
MODE OF OPERATION
f
(GHz)
V_CC
(V)
P_L
G_p
η_C
(W)
(dB)
(%)
Class-C; t_p = 150 µs; δ = 5%
1.2 to 1.4
50
≥35
≥7
≥30
Z_i; Z_L
(Ω)
see Fig 4
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2