RZ1214B35Y Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
RZ1214B35Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
T_sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
open base
R_BE = 0 Ω
open collector
t_p ≤ 150 µs; δ ≤ 5%≤
T_mb ≤ 75 °C;
t_p ≤ 150 µs; δ ≤ 5%
at 0.2 mm from the case;
t ≤ 10 s
MIN.
−
−
−
−
−
−
MAX.
65
15
60
3
3
125
UNIT
V
V
V
V
A
W
−65
+200
°C
−
200
°C
−
235
°C
150
handbook, halfpage
Ptot
(W)
100
MGD974
50
0
0
50
100
150
200
Tmb (°C)
t_p = 150 µs; δ = 5%.
Fig.2 Power derating curve.
1997 Feb 18
3