RZ1214B35Y Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
RZ1214B35Y
THERMAL CHARACTERISTICS
T_j = 75 °C unless otherwise specified
SYMBOL
PARAMETER
R_{th j-mb}
R_{th mb-h}
Z_{th j-h}
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
thermal resistance from junction to heatsink
CONDITIONS
note 1
t_p = 100 µs; δ = 10 %;
notes 1 and 2
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
MAX.
5
0.2
1
UNIT
K/W
K/W
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_(BR)CBO
V_(BR)CES
V_(BR)EBO
I_CBO
I_EBO
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
emitter cut-off current
CONDITIONS
I_C = 20 mA; I_E = 0
I_C = 20 mA; R_BE = 0
I_C = 0; I_E = 3 mA
V_CB = 50 V; I_E = 0
V_EB = 1.5 V; I_C = 0
MIN.
65
60
3
−
−
MAX.
−
−
−
2
0.2
UNIT
V
V
V
mA
mA
APPLICATION INFORMATION
The transistors are 100% tested under the following conditions
MODE OF
OPERATION
CONDITIONS
f
(GHz)
V_CC
(V)
Class- C
t_p = 150 µs; δ = 5% 1.2 to 1,4
50
t_p = 300 µs; δ = 10% 1.2 to 1,4 50
P_L
(W)
typ.40; >35
typ.40;
G_p
(dB)
typ.7.8; >7
typ.7
η_C
(%)
typ.35; >35
typ.35
Z_i; Z_L
(Ω)
see Fig 4
see Fig 4
1997 Feb 18
4