PTB23003X Datasheet, PDF (5/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PTB23003X
APPLICATION INFORMATION
Microwave performance in a common-base class B selective amplifier circuit; see note 1.
MODE OF OPERATION
Class B (CW)
f
(GHz)
2
V_CC
P_L
(V)
(W)
G_po
(dB)
24
>3; typ. 4
>8.75; typ. 10
η_C
(%)
>45; typ. 50
Note
1. Circuit consists of prematching circuit board in combination with complementary input and output slug tuners.
,,,,,,, ^{handbook, full pagewidth}
3.2 ^2.5 3.5 3.5
2
0.4 _0.5
,,,,,,,,,,,,,,, 3.6
input
,,,,,,,,,,,,,,,, _3.6
3.2
,,,,,,,,,,,,,,,,,,,,,, _1.5
83
15
3.2
7.8
2
output
100 pF
ATC
3.2
5
12.7
12
7.3
36
4
5
30
30
MSA103
Dimensions in mm.
Thickness: 0.8 mm.
Permittivity: ε_r = 2.55.
Substrate: circuits on a double copper clad printed-circuit board Teflon fibreglass dielectric.
Fig.3 Prematching test circuit board.
1997 Nov 13
5