PTB23003X Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PTB23003X
FEATURES
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Localized thick oxide auto-alignment process and gold
sandwich metallization ensure an optimum temperature
profile and excellent performance and reliability.
APPLICATIONS
Common-base, class B power amplifiers up to 4.2 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a metal ceramic SOT440A flange package with base
connected to the flange.
PINNING - SOT440A
PIN
DESCRIPTION
1 collector
2 emitter
3 base; connected to flange
olumns
1
c
b
3
e
2
Top view
MAM131
Marking code: 2303X.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to T_mb = 25 °C in a common-base class B circuit.
MODE OF
f
V_CC
P_L
G_po
η_C
OPERATION
(GHz)
(V)
(W)
(dB)
(%)
CW
2
24
≥3
≥8.75
≥45
Z_i
(Ω)
2.5 + j14
Z_L
(Ω)
8 + j6
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Nov 13
2