PTB23003X Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PTB23003X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_CES
I_C
P_tot
T_stg
T_j
T_sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
open base
R_BE = 0
T_mb = 75 °C; f > 1 MHz
t ≤ 10 s; note 1
Note
1. Up to 0.3 mm from ceramic.
MIN.
−
−
−
−
−
−65
−
−
MAX.
40
15
40
0.5
7.6
+200
200
235
UNIT
V
V
V
A
W
°C
°C
°C
10
handbook, halfpage
Ptot
(W)
5
MLC092
0
50
0
50
100
150
200
Tmb (^oC)
f > 1 MHz.
Fig.2 Power derating curve.
1997 Nov 13
3