PTB23003X Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PTB23003X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-mb}
R_{th mb-h}
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
T_j = 75 °C
T_j = 75 °C; note 1
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
MAX.
12
0.7
UNIT
K/W
K/W
CHARACTERISTICS
T_mb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CBO
V_(BR)CES
I_CBO
I_EBO
C_cb
C_ce
collector-base breakdown voltage I_C = 2 mA; I_E = 0
collector-emitter breakdown voltage I_C = 10 mA; R_BE = 0
collector cut-off current
V_CE = 24 V; I_E = 0
emitter cut-off current
V_EB = 1.5 V; I_C = 0
collector-base capacitance
I_E = I_C = 0; V_CB = 24 V;
V_EB = 1.5 V; f = 1 MHz
collector-emitter capacitance
I_E = I_C = 0; V_CB = 24 V;
V_EB = 1.5 V; f = 1 MHz
MIN.
40
40
−
−
−
TYP.
−
−
−
−
3
MAX.
−
−
20
0.4
−
UNIT
V
V
µA
µA
pF
−
0.6 −
pF
1997 Nov 13
4