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PSMN7R8-120PS_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 120V 7.9mΩ standard level MOSFET in TO220
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NXP Semiconductors
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
Symbol
Rth(j-a)
Parameter
thermal resistance
from junction to
ambient
Conditions
vertical in free air
Min Typ Max Unit
-
60
-
K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
0.1
0.1
0.05
0.02
10-2
003aak695
P
tp
δ= T
single shot
tp
t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
IDSS
drain leakage current VDS = 120 V; VGS = 0 V; Tj = 25 °C
VDS = 120 V; VGS = 0 V; Tj = 175 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 13
PSMN7R8-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 January 2013
Min Typ Max Unit
120 -
-
V
108 -
-
V
2
3
4
V
1
-
-
V
-
-
4.6 V
-
0.1 1
µA
-
-
500 µA
-
10
100 nA
-
10
100 nA
4.7 6.72 7.9 mΩ
-
19.3 22.9 mΩ
© NXP B.V. 2013. All rights reserved
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