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| PSMN7R8-120PS_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 120V 7.9mΩ standard level MOSFET in TO220 | |||
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NXP Semiconductors
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
Symbol
Parameter
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 25 °C; Fig. 2
Tmb = 25 °C
pulsed; tp ⤠10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
Vsup ⤠120 V; unclamped; RGS = 50 Ω;
Fig. 3
80
ID
(A)
60
003aak697
120
Pder
(%)
80
40
40
20
Min Max Unit
-
349 W
-55 175 °C
-55 175 °C
-
260 °C
-
70
A
-
280 A
-
386 mJ
03aa16
0
0
50
100
150
200
Tj (°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN7R8-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 January 2013
© NXP B.V. 2013. All rights reserved
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