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| PSMN7R8-120PS_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 120V 7.9mΩ standard level MOSFET in TO220 | |||
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PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
25 January 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and power
supply equipment.
2. Features and benefits
⢠High efficiency due to low switching and conduction losses
⢠TO220 package
⢠Suitable for standard level gate drive
3. Applications
⢠AC-to-DC power supply
⢠Synchronous rectification
⢠Motor control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 60 V;
Fig. 14; Fig. 15
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
Vsup ⤠120 V; unclamped; RGS = 50 Ω;
Fig. 3
Min Typ Max Unit
-
-
120 V
-
-
70
A
-
-
349 W
4.7 6.72 7.9 mΩ
-
50.5 -
nC
-
167 -
nC
-
-
386 mJ
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