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PSMN7R8-120PS_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel 120V 7.9mΩ standard level MOSFET in TO220
NXP Semiconductors
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
D
drain
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
123
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN7R8-120PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
PSMN7R8-120PS
Marking code
PSMN7R8-120PS
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS
gate-source voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
PSMN7R8-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 January 2013
Min Max Unit
-
120 V
-
120 V
-20 20
V
-
70
A
-
70
A
-
280 A
© NXP B.V. 2013. All rights reserved
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