 English |
|
|
|
|
|
|
|
| PMEM1505PG Datasheet, PDF (5/11 Pages) NXP Semiconductors – PNP transistor/Schottky rectifier module | |||
| |||
| ◁ |
Philips Semiconductors
PMEM1505PG
PNP transistor/Schottky rectiï¬er module
103
IF
(mA)
102
001aaa479
(1) (2) (3)
10
1
0
0.1
0.2
0.3
0.4
0.5
VF (V)
Schottky barrier rectiï¬er.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig 1. Forward current as a function of forward
voltage; typical values.
80
Cd
(pF)
60
001aaa481
40
20
105
IR
(µA)
104
103
102
10
001aaa480
(1)
(2)
(3)
1
0
5
10
15
20
25
VR (V)
Schottky barrier rectiï¬er.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig 2. Reverse current as a function of reverse
voltage; typical values.
600
hFE
400
001aaa486
(1)
(2)
200
(3)
0
0
5
10
15
20
VR (V)
Schottky barrier rectiï¬er; f = 1 MHz; Tamb = 25 °C.
Fig 3. Diode capacitance as a function of reverse
voltage; typical values.
0
â10â1
â1
â10
â102
â103
IC (mA)
PNP transistor; VCE = â2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = â55 °C.
Fig 4. DC current gain as a function of collector
current; typical values.
9397 750 12751
Product data sheet
Rev. 01 â 26 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5 of 11
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese