PMEM1505PG Datasheet, PDF (1/11 Pages) NXP Semiconductors – PNP transistor/Schottky rectifier module

PMEM1505PG
PNP transistor/Schottky rectifier module
Rev. 01 — 26 May 2004
Product data sheet
1. Product profile
1.1 General description
Combination of an PNP transistor with low V_CEsat and high current capability and a planar
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353
(SC-88A) small plastic package. NPN complement: PMEM1505NG.
1.2 Features
s 300 mW total power dissipation
s Current capability up to 0.5 A
s Reduces printed-circuit board area required
s Reduces pick and place costs
s Small plastic SMD package
s Transistor
x Low collector-emitter saturation voltage.
s Diode
x Ultra high-speed switching
x Very low forward voltage
x Guard ring protected.
1.3 Applications
s DC-to-DC converters
s Inductive load drivers
s General purpose load drivers
s Reverse polarity protection circuits
s MOSFET drivers.
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
PNP transistor
V_CEO
collector-emitter voltage open base
-
-
−15 V
I_C
collector current (DC)
continuous
[1] _-
-
−0.5 A
Schottky barrier rectifier
V_R
continuous reverse voltage
I_F
continuous forward current
-
-
20
V
-
-
0.5
A
[1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.