PMEM1505PG Datasheet, PDF (4/11 Pages) NXP Semiconductors – PNP transistor/Schottky rectifier module

Philips Semiconductors
PMEM1505PG
PNP transistor/Schottky rectifier module
7. Characteristics
Table 7: Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
PNP transistor
I_CBO
I_EBO
collector-base cut-off
current
emitter-base cut-off
current
V_CB = −15 V; I_E = 0 A
V_CB = −15 V; I_E = 0 A;
T_j = 150 °C
V_EB = −5 V; I_C = 0 A
-
-
−100
nA
-
-
−50
µA
-
-
−100
nA
h_FE
DC current gain
V_CE = −2 V; I_C = −10 mA
200
-
-
V_CE = −2 V; I_C = −100 mA
150
-
-
V_CE = −2 V; I_C = −500 mA
90
-
-
V_CEsat
collector-emitter
I_C = −10 mA; I_B = −0.5 mA
[1]
-
-
−25
mV
saturation voltage
I_C = −200 mA; I_B = −10 mA
-
-
−150
mV
I_C = −500 mA; I_B = −50 mA
-
-
−250
mV
R_CEsat
equivalent
on-resistance
I_C = −500 mA; I_B = −50 mA
[1]
-
300
< 500
mΩ
V_BEsat
base-emitter
I_C = −500 mA; I_B = −50 mA
[1]
-
-
−1.1
V
saturation voltage
V_BEon
base-emitter turn-on V_CE = −2 V; I_C = −100 mA
[1]
-
-
−0.9
V
voltage
f_T
transition frequency V_CE = −10 V; I_C = −50 mA;
[1]
100
280
-
MHz
f = 100 MHz
C_c
collector capacitance V_CB = −10 V; I_E = I_e = 0 A;
f = 1 MHz
-
4.4
10
pF
Schottky barrier rectifier
V_F
continuous forward see Figure 1
voltage
I_F = 10 mA
[1]
-
I_F = 100 mA
[1]
-
I_F = 500 mA
[1]
-
I_F = 1000 mA
[1]
-
I_R
reverse current
see Figure 2
V_R = 5 V
[1]
-
V_R = 8 V
[1]
-
V_R = 15 V
[1]
-
C_d
diode capacitance V_R = 5 V; f = 1 MHz; see
-
Figure 3
240
270
mV
300
350
mV
400
460
mV
480
550
mV
5
10
µA
7
20
µA
10
50
µA
19
25
pF
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
9397 750 12751
Product data sheet
Rev. 01 — 26 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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