PHX23NQ10T Datasheet, PDF (5/8 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHX23NQ10T
50 ^{ID / A}
40
30
20
10
0
0
2
Tj / C = 25
150
4
6
VGS / V
8
10
Fig.7. Typical transfer characteristics.
I_D = f(V_GS)
Transconductance, gfs (S)
20
18
Tj = 25 C
16
14
12
10
150 C
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Drain current, ID / (A)
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D)
2.4 ^{Normalised On-state Resistance.}
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction temperature , Tj (C)
Fig.9. Normalised drain-source on-state resistance.
R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j)
Threshold Voltage, VGS(TO) (V)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
1.0E-01 ^{Drain current, ID (A)}
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate-source voltage, VGS (V)
Fig.11. Sub-threshold drain current.
I_D = f(V_GS); conditions: T_j = 25 ˚C; V_DS = V_GS
Capacitances, Ciss, Coss, Crss (pF)
10000
1000
Ciss
Coss
100
Crss
10
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Fig.12. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
September 1999
5
Rev 1.000