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| PHX23NQ10T Datasheet, PDF (3/8 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
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Philips Semiconductors
N-channel TrenchMOS⢠transistor
Product specification
PHX23NQ10T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
(body diode)
ISM
Pulsed source current (body
diode)
VSD
Diode forward voltage
IF = 11 A; VGS = 0 V
trr
Reverse recovery time
IF = 11 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge VGS = 0 V; VR = 25 V
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ⤠65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
- 13 A
-
- 92 A
- 0.9 1.2 V
- 64 - ns
- 120 - nC
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
September 1999
3
Rev 1.000
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