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PHX23NQ10T Datasheet, PDF (2/8 Pages) NXP Semiconductors – N-channel TrenchMOS transistor
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Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHX23NQ10T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
Non-repetitive avalanche Unclamped inductive load, IAS = 14 A;
energy
tp = 100 µs; Tj prior to avalanche = 25˚C;
VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:15
IAS
Peak non-repetitive
avalanche current
MIN.
-
MAX.
93
UNIT
mJ
-
23
A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
SOT186a package, in free air
MIN. TYP. MAX. UNIT
-
- 4.6 K/W
- 55 - K/W
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
IGSS
IDSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA;
VDS = VGS; ID = 1 mA
VGS = 10 V; ID = 13 A
VGS = ± 10 V; VDS = 0 V
VDS = 100 V; VGS = 0 V
Tj = -55˚C
Tj = 150˚C
Tj = -55˚C
Tj = 150˚C
Tj = 150˚C
ID = 23 A; VDD = 80 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 50 V; RD = 2.2 Ω;
VGS = 10 V; RG = 5.6 Ω
Resistive load
Internal drain inductance
Internal source inductance
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
100 -
-
V
89 -
-
V
2
3
4
V
1.25 -
-
V
-
-
6
V
- 49 70 mΩ
- 115 163 mΩ
- 10 100 nA
- 0.05 10 µA
-
- 500 µA
- 22 - nC
-
5
- nC
- 10 - nC
-
8
- ns
- 39 - ns
- 26 - ns
- 24 - ns
- 4.5 - nH
- 7.5 - nH
- 890 1187 pF
- 139 167 pF
- 83 109 pF
September 1999
2
Rev 1.000
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