PHX23NQ10T Datasheet, PDF (1/8 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHX23NQ10T
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
SYMBOL
d
g
s
QUICK REFERENCE DATA
V_DSS = 100 V
I_D = 13 A
R_DS(ON) ≤ 70 mΩ
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
• T.V. and computer monitor power supplies
The PHX23NQ10T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING
SOT186A (FPAK)
PIN
DESCRIPTION
case
1
gate
2
drain
3
source
case
isolated
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
P_D
T_j, T_stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
T_j = 25 ˚C to 150˚C
T_j = 25 ˚C to 150˚C; R_GS = 20 kΩ
T_mb = 25 ˚C; V_GS = 10 V
T_mb = 100 ˚C; V_GS = 10 V
T_mb = 25 ˚C
T_mb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
± 20
13
8
52
27
150
UNIT
V
V
V
A
A
A
W
˚C
September 1999
1
Rev 1.000