PHT6NQ10T Datasheet, PDF (5/7 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHT6NQ10T
Gate-source voltage, VGS (V)
15
14 ID = 6A
13
12
Tj = 25 C
11
10
VDD = 20 V
9
8
7
6
5
4
3
2
1
0
VDD = 80 V
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Gate charge, QG (nC)
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G)
Source-Drain Diode Current, IF (A)
6
VGS = 0 V
5
4
150 C
3
Tj = 25 C
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Source-Drain Voltage, VSDS (V)
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
August 1999
5
Rev 1.000