PHT6NQ10T Datasheet, PDF (3/7 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHT6NQ10T
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
Solder Point temperature, Tsp (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_sp)
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
Solder Point temperature, Tsp (C)
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_sp); V_GS ≥ 10 V
100 ^{Peak Pulsed Drain Current, IDM (A)}
RDS(on) = VDS/ ID
10
1
D.C.
0.1
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.01
1
10
100
Drain-Source Voltage, VDS (V)
1000
Fig.3. Safe operating area
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
100 ^{Transient thermal impedance, Zth j-sp (K/W)}
D = 0.5
10
0.2
0.1
1 _0.05
0.02
0.1
PD
tp ^{D = tp/T}
0.01
1E-06
single pulse
T
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
Pulse width, tp (s)
1E+01
Fig.4. Transient thermal impedance.
Z_{th j-sp} = f(t); parameter D = t_p/T
6 ^{Drain Current, ID (A)}
VGS = 10V
5.4 V
5
8V
6V
4
Tj = 25 C
3
2
1
5.2 V
5V
4.8 V
4.6 V
4.4 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.2
4.6V
4.8V
5V
0.18
0.16
5.2 V
0.14
0.12
5.4 V
0.1
6V
0.08
8V
0.06
VGS = 10V
0.04
0.02 _{Tj = 25 C}
0
0
1
2
3
4
5
6
Drain Current, ID (A)
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D)
August 1999
3
Rev 1.000