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| PHT6NQ10T Datasheet, PDF (2/7 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
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Philips Semiconductors
N-channel TrenchMOS⢠transistor
Product specification
PHT6NQ10T
ELECTRICAL CHARACTERISTICS
Tj= 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
IGSS
IDSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA;
VDS = VGS; ID = 1 mA
VGS = 10 V; ID = 3 A
VGS = ±10 V; VDS = 0 V
VDS = 100 V; VGS = 0 V;
Tj = -55ËC
Tj = 150ËC
Tj = -55ËC
Tj = 150ËC
Tj = 150ËC
ID = 6 A; VDD = 80 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 50 V; RD = 8.2 â¦;
VGS = 10 V; RG = 5.6 â¦
Resistive load
Internal drain inductance
Internal source inductance
Measured tab to centre of die
Measured from source lead to source
bond pad
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
100 -
-
V
89 -
-
V
2
3
4
V
1.2 -
-
V
-
6
V
- 57 90 mâ¦
-
- 216 mâ¦
- 10 100 nA
- 0.05 10 µA
-
- 500 µA
- 21 - nC
- 2.5 - nC
- 8.2 - nC
-
6
- ns
- 15 - ns
- 20 - ns
- 10 - ns
- 2.5 - nH
-
5
- nH
- 633 - pF
- 103 - pF
- 61 - pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current Tsp = 25 ËC
(body diode)
ISM
Pulsed source current (body
diode)
VSD
Diode forward voltage
IF = 6 A; VGS = 0 V
trr
Reverse recovery time
IF = 6 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge VGS = 0 V; VR = 25 V
MIN. TYP. MAX. UNIT
-
- 5.5 A
-
- 26 A
- 0.8 1.2 V
- 55 - ns
- 135 - nC
August 1999
2
Rev 1.000
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