PHP42N03LT Datasheet, PDF (5/8 Pages) NXP Semiconductors – TrenchMOS transistor Logic level FET

Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
PHP42N03LT, PHB42N03LT
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2%
typ
98%
1E-04
1E-05
1E-05
0
0.5
1
1.5
2
2.5
3
Fig.11. Sub-threshold drain current.
I_D = f(V_GS); V_DS = V_GS
C / pF
10000
9528-30
Ciss
1000
Coss
100
0.1
1
10
VDS / V
Crss
100
Fig.12. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); V_GS = 0 V; f = 1 MHz
15 ^{VGS, Gate-Source voltage (Volts)}
VDD=24V
ID=20A
Tj = 25C
10
PHP50N03LT
5
0
0
10
20
30
40
50
Qg, Gate charge (nC)
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G)
IF / A
60
9528-30
50
40
Tj / C = 175
25
30
20
10
0
0
0.5
1
1.5
2
VSDS / V
Fig.14. Typical reverse diode current.
I_F = f(V_SDS)
November 1998
5
Rev 1.400