PHP42N03LT Datasheet, PDF (1/8 Pages) NXP Semiconductors – TrenchMOS transistor Logic level FET

Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
PHP42N03LT, PHB42N03LT
FEATURES
SYMBOL
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
d
g
s
QUICK REFERENCE DATA
V_DSS = 30 V
I_D = 42 A
R_DS(ON) ≤ 26 mΩ (V_GS = 5 V)
R_DS(ON) ≤ 23 mΩ (V_GS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching
applications.
The PHP42N03LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB42N03LT is supplied in the SOT404 surface mounting package.
PINNING
PIN
DESCRIPTION
1 gate
SOT78 (TO220AB)
tab
SOT404
tab
2 drain ¹
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
P_D
T_j, T_stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
T_j = 25 ˚C to 175˚C
T_j = 25 ˚C to 175˚C; R_GS = 20 kΩ
T_mb = 25 ˚C; V_GS = 5 V
T_mb = 100 ˚C; V_GS = 5 V
T_mb = 25 ˚C
T_mb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
30
30
± 15
42
30
168
86
175
UNIT
V
V
V
A
A
A
W
˚C
November 1998
1
Rev 1.400