CGY2030M Datasheet, PDF (5/12 Pages) NXP Semiconductors – DECT 500 mW power amplifier

Philips Semiconductors
DECT 500 mW power amplifier
Product specification
CGY2030M
AC CHARACTERISTICS
V_DD = 3.2 V; f_RF = 1900 MHz; P_i = 0 dBm; T_amb = 25 °C; duty factor δ = 25%; 50 Ω impedance system; measured and
guaranteed on CGY2030M evaluation board (see Fig.4).
SYMBOL
PARAMETER
CONDITIONS MIN. TYP.
P_i
input power
δ
duty factor
note 1
−3
−
−
−
f_RF
operating frequency
−
1 900
Measured in mode 1; without negative biasing; V_GG1 and V_GG2 connected to ground
P_o
output power
η
efficiency
26
27
−
40
P_leak
H2, H3
Stab
RF leakage to output in power off state
second and third harmonics level
stability (spurious levels)
V_DD = 0 V
note 2
−
−40
−
−35
−
−60
MAX.
+5
25
−
28.5
−
−
−
−
UNIT
dBm
%
MHz
dBm
%
dBm
dBc
dBc
Measured in mode 2; with negative biasing at pins V_GG1 and V_GG2
P_o
output power
η
efficiency
P_leak
RF leakage to output in power off state
V_DD = 0 V
25.5 26.5 28
−
35
−
−
−50
−
dBm
%
dBm
Notes
1. Self biasing guaranteed in mode 1 at minimum input power (−3 dBm) and minimum supply voltage V_DD (2.6 V).
2. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1
load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees
during a 60 seconds test period.
1997 Jan 17
handbook,³h²alfpage
Po
(dBm)
Po
28
MGG165
650
IDD
(mA)
550
24
450
IDD
20
350
2
3
4
5
VDD (V)
Fig.3 Typical power and current characteristics in mode 1.
5