CGY2030M Datasheet, PDF (2/12 Pages) NXP Semiconductors – DECT 500 mW power amplifier

Philips Semiconductors
DECT 500 mW power amplifier
Product specification
CGY2030M
FEATURES
• Power Amplifier (PA) overall efficiency 40%
• 27 dB gain
• 0 dBm input power
• Operation possible without negative supply
• Wide operating temperature range −30 to +85 °C
• SSOP16 package.
GENERAL DESCRIPTION
The CGY2030M is a GaAs Monolithic Microwave
Integrated Circuit (MMIC) power amplifier specifically
designed to operate at 3.6 V battery supply. When power
control is not required, it can be operated without negative
supply voltage.
APPLICATIONS
• 1.88 to 1.9 GHz transceivers for DECT applications
• 2 GHz transceivers (PHS, DCS).
QUICK REFERENCE DATA
SYMBOL
PARAMETER ⁽¹⁾
MIN.
V_DD
positive supply voltage
−
I_DD
positive peak supply current
−
P_o
output power
−
T_amb
operating ambient temperature
−30
Note
1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.
TYP.
3.2
400
27
−
MAX.
−
−
−
+85
UNIT
V
mA
dBm
°C
ORDERING INFORMATION
TYPE NUMBER
CGY2030M
NAME
SSOP16
PACKAGE
DESCRIPTION
plastic shrink small outline package; 16 leads; body width 4.4 mm
VERSION
SOT369-1
BLOCK DIAGRAM
handbook, full pagewidth
1997 Jan 17
VDD1
VDD2
VDD3
8
5
13
CGY2030M
9
RFI
16
RFO/VDD4
2, 3, 4, 6, 7,
11, 12, 14, 15
10
VGG1
1
VGG2
MBG631
Fig.1 Block diagram.
2