CGY2030M Datasheet, PDF (4/12 Pages) NXP Semiconductors – DECT 500 mW power amplifier

Philips Semiconductors
DECT 500 mW power amplifier
Product specification
CGY2030M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_DD
V_DD − V_GG
T_j(max)
P_tot
T_stg
operating supply voltage
voltage difference between supply voltage
and gate bias voltage
maximum operating junction temperature
total power dissipation
IC storage temperature
no input signal
MIN.
−
−
−
−
−55
TYP.
−
−
−
−
−
MAX.
5.2
8
UNIT
V
V
150
°C
400
mW
+125 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient in free air
VALUE
145
UNIT
K/W
HANDLING
Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model
(HBM)], in accordance with “MIL STD 883C - method 3015”.
DC CHARACTERISTICS
V_DD = 3.2 V; T_amb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
Pins RFO/V_DD4, V_DD3, V_DD2 and V_DD1
V_DD
positive supply voltage
I_DD
positive peak supply current
Pins V_GG1 and V_GG2; in mode 2
V_GG1
V_GG2
I_GG(tot)
bias voltage for input stages
bias voltage for output stage
total gate peak current
note 1
note 1
note 2
2.6
3.2
4.2
−
400
500
−
−1.2
−
−
−2.0
−
−1
−
+1
Notes
1. Negative voltages V_GG1 and V_GG2 must be applied before supply voltage V_DD.
2. Due to non linear effects at high power levels, the gate current can be either negative or positive.
UNIT
V
mA
V
V
mA
1997 Jan 17
4