BUK78150-55 Datasheet, PDF (5/9 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK78150-55
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2%
typ
98%
1E-04
1E-05
1E-06
0
1
2
3
4
5
Fig.11. Sub-threshold drain current.
I_D = f(V_GS); conditions: T_j = 25 ˚C; V_DS = V_GS
350
300
250
200
Ciss
150
100
50
0
0.01
0.1
1 _VDS/V 10
Coss
Crss
100
Fig.12. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
12
VGS/V
10
8
VDS = 14V
VDS = 44V
6
4
2
0
0
1
2
3
4
5
6
7
QG/nC
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 5 A; parameter V_DS
10
IF/A
8
6
Tj/C = 150
25
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSDS/V
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20
40
60
80 100 120 140
Tmb / C
Fig.15. Normalised avalanche energy rating.
W_DSS% = f(T_sp); conditions: I_D = 1.9 A
VGS
0
RGS
L
VDS
T.U.T.
+ ^VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
W_DSS = 0.5 ⋅ LI_D² ⋅ BV_DSS/(BV_DSS − V_DD)
January 1998
5
Rev 1.000