BUK78150-55 Datasheet, PDF (2/9 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK78150-55
THERMAL RESISTANCES
SYMBOL
R_{th j-sp}
R_{th j-amb}
PARAMETER
From junction to solder point
From junction to ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.18
TYP.
12
-
MAX.
15
70
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T_j= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DSS
V_GS(TO)
I_DSS
I_GSS
±V_(BR)GSS
R_DS(ON)
Drain-source breakdown
V_GS = 0 V; I_D = 0.25 mA
voltage
T_j = -55˚C
Gate threshold voltage
V_DS = V_GS; I_D = 1 mA
T_j = 150˚C
T_j = -55˚C
Zero gate voltage drain current V_DS = 55 V; V_GS = 0 V;
T_j = 150˚C
Gate source leakage current V_GS = ±10 V
T_j = 150˚C
Gate source breakdown voltage I_G = ±1 mA
Drain-source on-state
V_GS = 10 V; I_D = 5 A
resistance
T_j = 150˚C
MIN.
55
50
2.0
1.2
-
-
-
-
-
16
-
-
TYP.
-
-
3.0
-
-
0.05
-
0.04
-
-
120
-
MAX.
-
-
4.0
-
4.4
10
100
1
10
-
150
277
UNIT
V
V
V
V
V
µA
µA
µA
µA
V
mΩ
mΩ
DYNAMIC CHARACTERISTICS
T_mb = 25˚C unless otherwise specified
SYMBOL PARAMETER
g_fs
Forward transconductance
C_iss
Input capacitance
C_oss
Output capacitance
C_rss
Feedback capacitance
t_{d on}
Turn-on delay time
t_r
Turn-on rise time
t_{d off}
Turn-off delay time
t_f
Turn-off fall time
CONDITIONS
V_DS = 25 V; I_D = 5 A; T_j = 25˚C
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
V_DD = 30 V; I_D = 5 A;
V_GS = 10 V; R_G = 10 Ω;
T_j = 25˚C
MIN.
0.5
-
-
-
-
-
-
-
TYP.
2.5
190
65
32
9
28
15
8
MAX.
-
240
80
45
14
42
23
12
UNIT
S
pF
pF
pF
ns
ns
ns
ns
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T_j = -55 to 175˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_DR
Continuous reverse drain
T_sp = 25˚C
current
I_DRM
Pulsed reverse drain current T_sp = 25˚C
V_SD
Diode forward voltage
I_F = 2 A; V_GS = 0 V
t_rr
Reverse recovery time
I_F = 2 A; -dI_F/dt = 100 A/µs;
Q_rr
Reverse recovery charge
V_GS = -10 V; V_R = 30 V
MIN. TYP. MAX. UNIT
-
-
5.5 A
-
-
30
A
- 0.85 1.1 V
-
43
-
ns
- 0.16 -
µC
January 1998
2
Rev 1.000