BUK78150-55 Datasheet, PDF (3/9 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK78150-55
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W_DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I_D = 1.9 A; V_DD ≤ 25 V;
V_GS = 10 V; R_GS = 50 Ω; T_sp = 25 ˚C
MIN.
-
TYP.
-
MAX. UNIT
15 mJ
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_sp)
120 ^ID%
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_sp); conditions: V_GS ≥ 10 V
100
ID/A
BUKX8150-55
RDS(ON) = VDS/ID
10
DC
1
tp =
1 us
10 us
100 us
1 ms
10 ms
100 ms
0.1 ₁
10
55
VDS/V
Fig.3. Safe operating area. T_sp = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Zth / (K/W)
1E+02
BUKX8150-55
3E+01
1E+01
0.5
3E+00 0.2
0.1
1E+00 _0.05
3E-01 ^0.02
1E-01
0
3E-02
P_D
tp
D
=
tp
T
T
t
1E-02
1E-07
1E-05
1E-03
t/s
1E-01
1E+01
Fig.4. Transient thermal impedance.
Z_{th j-sp} = f(t); parameter D = t_p/T
January 1998
3
Rev 1.000