BUK78150-55 Datasheet, PDF (4/9 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK78150-55
10
16
ID/A
10
8
8
6
VGS/V =
6.5
6.0
5.5
4
5.0
2
4.5
4.0
0
0
2
4
6
8
10
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
400 ^RDS(ON)mOhm
5
300
5.5
6
200
100
6.5
7
8
10
0
0 1 2 3 4 5 6 7 8 9 10 11
ID/A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
10
ID/A
8
6
4
Tj/C = 150
25
2
0
0
1
2
3
4
5
6
7
8
VGS/V
Fig.7. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V; parameter T_j
4
gfs/S
3.5
3
2.5
2
1.5
1
1 2 3 4 5 6 7 8 9 10
ID/A
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 25 V
2.5 ^a
BUK98XX-55
Rds(on) normalised to 25degC
2
1.5
1
0.5
-100
-50
0
50
100
150
200
Tmb / degC
Fig.9. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 5 A; V_GS = 10 V
VGS(TO) / V
5
max.
4
typ.
3
min.
2
BUK78xx-55
1
0
-100
-50
0
50
Tj / C
100
150
200
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
January 1998
4
Rev 1.000