BU2506DX Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2506DX
IC / A
100
IC / A
100
ICM max
10
IC max
= 0.01
II
tp =
10 us
1
Ptot max
100 us
I
0.1
1 ms
10 ms
DC
0.01
1
10
100
1000
VCE / V
Fig.12. Forward bias safe operating area. T_hs = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
ICM max
10
IC max
= 0.01
II
tp =
10 us
1
Ptot max
I
0.1
100 us
1 ms
10 ms
DC
0.01
1
10
100
1000
VCE / V
Fig.13. Forward bias safe operating area. T_hs = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
September 1997
5
Rev 2.400