BU2506DX Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2506DX
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
1
0.9
IC =
0.8
4A
3A
2.5A
0.7
0.6
0
1
2
3 _{IB / A} 4
Fig.7. Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
VCESAT / V
10
IC = 2.5A
3A
4A
1
Tj = 25 C
Tj = 125 C
0.1
0.1
1
IB / A
10
Fig.8. Typical collector-emitter saturation voltage.
V_CEsat = f (I_B); parameter I_C
Eoff / uJ
1000
IC = 3A
100
2.5A
ts, tf / us
10
9
ts
8
7
6
5
4
IC =
3
3A
2
2.5A
1
tf
0
0.1
1
10
IB / A
Fig.10. Typical collector storage and fall time.
ts = f (I_B); tf = f (I_B); parameter I_C; T_j = 85˚C
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C} = f (T_hs)
10
0.1
1
IB / A
10
Fig.9. Typical turn-off losses. T_j = 85˚C
Eoff = f (I_B); parameter I_C
September 1997
4
Rev 2.400