BU2506DX Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2506DX
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.1. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
D.U.T.
LB
Cfb
Rbe
Fig.3. Switching times test circuit.
h FE
100
10
Tj = 25 C
Tj = 125 C
5V
1V
1
0.01
Fig.4.
0.1 _{IC / A} 1
10
Typical DC current gain. h_FE = f (I_C)
parameter V_CE
VBESAT / V
1.2
1.1
Tj = 25 C
Tj = 125 C
1
0.9
0.8
IC/IB =
0.7
3
4
0.6
5
0.5
0.4
0.1
1
IC / A
10
Fig.5. Typical base-emitter saturation voltage.
V_BEsat = f (I_C); parameter I_C/I_B
VCESAT / V
1
0.9
0.8
0.7
IC/IB =
5
4
3
0.6
0.5
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
0.1
1
IC / A
10
Fig.6. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
September 1997
3
Rev 2.400