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BU2506DX Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2506DX
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
three terminals to external
heatsink
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
-
-
TYP.
-
-
32
TYP.
22
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
MAX. UNIT
2500 V
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
Rbe
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 600 mA
VEB = 7.5 V
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 3.0 A; IB = 0.79 A
IC = 3.0 A; IB = 0.79 A
IC = 0.3 A; VCE = 5 V
IC = 3.0 A; VCE = 5 V
IF = 3.0 A
MIN.
-
-
-
7.5
-
700
-
-
-
3.8
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
136
-
mA
13.5 -
V
55
-
Ω
-
-
V
-
5.0
V
-
1.1
V
12
-
5.5 7.5
1.6 2.0
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Cc
Collector capacitance
Switching times (line deflection
circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICsat = 3.0 A; LC = 1.35 mH;
CFB = 9.4 nF; IB(end) = 0.67 A;
LB = 8 µH; -VBB = 4 V;
(-dIB/dt = 0.45 A/µs)
TYP. MAX. UNIT
47
-
pF
4.5 6.0 µs
0.25 0.5 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 2.400