BFU725F_N1_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
Table 7. Characteristics …continued
T_j = 25 C unless otherwise specified.
Symbol Parameter
P_L(1dB) output power at 1 dB gain
compression
IP3
third-order intercept point
Conditions
I_C = 25 mA; V_CE = 2 V; Z_S = Z_L = 50 ; T_amb = 25 C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
I_C = 25 mA; V_CE = 2 V; Z_S = Z_L = 50 ; T_amb = 25 C;
f₂ = f₁ + 1 MHz
f₁ = 1.5 GHz
f₁ = 1.8 GHz
f₁ = 2.4 GHz
f₁ = 5.8 GHz
[1] G_p(max) is the maximum power gain, if K  1. If K  1 then G_p(max) = MSG.
Min Typ Max Unit
- 8.5 -
-9-
- 8.5 -
-8-
dBm
dBm
dBm
dBm
- 17 -
- 17 -
- 17 -
- 19 -
dBm
dBm
dBm
dBm
30
I_C
(mA)
20
10
001aak271
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_CE (V)
T_amb = 25 C.
(1) I_B = 110 A
(2) I_B = 100 A
(3) I_B = 90 A
(4) I_B = 80 A
(5) I_B = 70 A
(6) I_B = 60 A
(7) I_B = 50 A
(8) I_B = 40 A
(9) I_B = 30 A
(10) I_B = 20 A
(11) I_B = 10 A
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
400
h_FE
350
300
250
200
0
(1)
(2)
(3)
10
T_amb = 25 C.
(1) V_CE = 1 V
(2) V_CE = 1.5 V
(3) V_CE = 2 V
001aak272
20
30
I_C (mA)
Fig 3. DC current gain a function of collector current;
typical values
BFU725F_N1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
5 of 12