BFU725F_N1_15 Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
C_CBS
collector-base
capacitance
V_CB = 2 V; f = 1 MHz
f_T
transition frequency
G_p(max) maximum power gain
NF
noise figure
I_C = 25 mA; V_CE = 2 V;
f = 2 GHz; T_amb = 25 C
I_C = 25 mA; V_CE = 2 V;
f = 5.8 GHz; T_amb = 25 C
I_C = 5 mA; V_CE = 2 V;
f = 5.8 GHz; _S = _opt;
T_amb = 25 C
Min Typ
- 70
- 55
[2] _-
18
- 0.7
Max
-
-
-
-
Unit
fF
GHz
dB
dB
[1] T_sp is the temperature at the solder point of the emitter lead.
[2] G_p(max) is the maximum power gain, if K > 1. If K < 1 then G_p(max) = Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol
3
4
4
2
1
2
1, 3
mbb159
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BFU725F/N1 -
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
4. Marking
Table 4. Marking
Type number
BFU725F/N1
Marking
B7*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China
BFU725F_N1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
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