BFU725F_N1_15 Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
T_sp  90 C
-
-
-
-
[1] _-
65
-
[1] T_sp is the temperature at the solder point of the emitter lead.
Max
10
2.8
1.0
40
136
+150
150
Unit
V
V
V
mA
mW
C
C
6. Thermal characteristics
Table 6.
Symbol
R_th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ Unit
440 K/W
200
P_tot
(mW)
150
001aah424
100
50
0
0
40
Fig 1. Power derating curve
80
120
160
T_sp (°C)
BFU725F_N1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
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